Spin current injection by intersubband transitions in quantum wells
نویسندگان
چکیده
منابع مشابه
Temperature stability of intersubband transitions in AlN/GaN quantum wells
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400◦C. The self-consistent Schrödinger-Poisson modeling includes temperature effects of the band-ga...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1882747